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Lecture Notes

ENGINEERING TRIPOS PART IIB - 2015-16

Module 4B6 - Solid State Devices and Chemical/Biological Sensors

Module Leader: Prof Daping Chu (dpc31)

Lecturers: Prof Daping Chu (dpc31)

Dr Man Yi Ho (myh20)

Timing and Structure: Lent Term. 14 lectures (including examples classes).

Assessment: 100% exam

Prerequisites:    3B5 and 3B6 useful

Aims

The aims of the course are to:

  • introduce the student to the theory , and design of MOS Field-Effect Transistors (MOSFETs), based on both single crystal and thin-film materials.
  • introduce examples of applications of MOSFETs

Objectives

As specific objectives, by the end of the course students should be able to:

  • understand MOSFET theory and standard approximations.
  • correlate material properties and conduction mechanisms with the MOSFET electrical characteristics, for single crystal, amorphous and polycrystalline devices.
  • understand the basic properties of ferroelectrics and its application for memory devices.
  • understand the concept of giant magneto-resistance and its applications including non-volatile memory devices.
  • understand the operation of liquid crystal displays.
  • understand the construction and operation of micromechanical displays, and other emerging display technologies.

Syllabus & Lecture Notes

The aim of this module is to introduce the student to the theory, and design of MOS Field-Effect Transistors (MOSFETs), based on both single crystal and thin-film materials. This will be followed by application examples, including chemical/biological sensors in sensor technologies,ferroelectric and magnetic random access memories (FRAM and MRAM) in non-volatile memory technologies, and active matrix liquid crystal displays and micromechanical displays in display technologies. Emphasis will be placed on both device physics and application technology.

 

MOS Devices Introduction (3L)

Properties of MOS Capacitors, Capacitance - voltage characteristics; MOSFET structures and operation.

 

MOS Devices & Thin Film Transistors (5L)

Short channel and hot electron effects; Applications and future trends in miniaturising single crystal devices; Amorphous and polycrystalline silicon and other thin-film transistors. Organic thin-film transistors, Ion-sensitive thin, film trasistors and biosensors.

 

Non-Volatile Memory Devices and Displays (5L)

Ferroelectrics and ferroelectric random access memories; Giant magneto-resistance (GMR) and magnetic random access memories. Directly driven liquid crystal displays; Active matrix liquid crystal displays and projectors; Micromechanical projectors; Other types of displays and emerging technologies.

Example Papers

References

  • Lecture Notes (see above).
  • S M Sze: "Physics of Semiconductor", John Wiley,1981, Chapters 7 and 8 (note that there is rather more than covered in the lectures).
  • J Singh: "Semiconductor Devices", John Wiley 2001.
  • Article "Thin -Film Transistors", by P Migliorato, in Encylopedia of Physical Science and Technology, (Excluding the mathematical derivations), distributed at the lectures.
  • J F Scott: "Ferroelectric Memories", Springer, 2000.

Booklists

Please see the Booklist for Group B Courses for references for this module.

Assessment

Please refer to Form & conduct of the examinations

UK-SPEC

This syllabus contributes to the following areas of the UK-SPEC standard:

Show/hide UK-SPEC list

Introduction of CPDS

Centre for Photonic Devices and Sensors (CPDS) is in the Photonics area of the Electrical Engineering Division, with a research focus embracing photonic and sensing devices, functional materials and their integration at system level.

We aim to address future societal needs with new system functionalities through invention of novel device architectures based on in-depth understanding of basic material properties.

There is a wide range of activities within the group, including phase-only holography and its applications, high brightness multi-stable colour reflective displays, tunable dielectric materials and devices for radio frequencies, liquid crystal on silicon (LCOS) device development, and novel sensors.

As well as conducting highly focused studies, we also specialise in the development of demonstrators for business exploitation and commercialisation. This is facilitated by multi-disciplinary expertise within the group and by our highly experienced team approach. Some of the outcomes from the group have been successfully transferred to our industrial collaborators for production.